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| SMD Type Silicon PNP Epitaxial Planar Type 2SB1218 Transistors IC Features High forward current transfer ratio hFE. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Rating -45 -45 -7 -200 -100 150 150 -55 to +150 Unit V V V A A mW Electrical Characteristics Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector-base cutoff current Collector-emitter cutoff current Forward current transfer ratio Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol VCBO VCEO VEBO ICBO ICEO hFE Testconditons IC = -10 iA, IE = 0 IC = -2 mA, IB = 0 IE = -10 iA, IC = 0 VCB = -20 V, IE = 0 VCE = -10 V, IB = 0 VCE = -10 V, IC = -2 mA 160 -0.3 80 2.7 Min -45 -45 -7 -0.1 -100 460 -0.5 V MHz pF Typ Max Unit V V V iA iA VCE(sat) IC = -100 mA, IB = -10 mA fT Cob VCB = -10 V, IE = 1 mA, f = 200 MHz VCB = -10 V, IE = 0, f = 1 MHz hFE Classification Marking Rank hFE BQ Q 160 260 BR R 210 340 BS S 290 460 B No-rank 160 460 www.kexin.com.cn 1 |
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